Dynamic random access memory device with intermediate voltage ge

Static information storage and retrieval – Read/write circuit – Testing

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

371 211, G11C 2900

Patent

active

053155548

ABSTRACT:
When a dynamic random access memory device is powered with an external power voltage, a first intermediate voltage generator produces an intermediate voltage from the external power voltage for supplying to the counter electrodes of the storage capacitors of memory cells and a precharge unit, and the first intermediate voltage generator is replaced with a second intermediate voltage generator after the internal power voltage becomes stable, wherein a switch transistor blocks the counter electrodes and the precharge unit from the second intermediate voltage generator during a test operation on bit lines, thereby effectively screening out defective products.

REFERENCES:
patent: 4459686 (1984-07-01), Toyoda
patent: 5051995 (1991-09-01), Tobita
patent: 5079744 (1992-01-01), Tobita et al.
patent: 5157629 (1992-10-01), Sato et al.
patent: 5208777 (1993-05-01), Shibata

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Dynamic random access memory device with intermediate voltage ge does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Dynamic random access memory device with intermediate voltage ge, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dynamic random access memory device with intermediate voltage ge will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1978520

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.