Dynamic random access memory device including stacked capacitors

Details Dynamic random access memory device including stacked capacitors Dynamic random access memory device including stacked capacitors

1991-02-05

1993-02-16

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

H01L 2968, H01L 2348

Patent

active

051875497

ABSTRACT:
For decreasing the amount of real estate assigned to each memory cell, a random access memory device is fabricated on a semiconductor substrate from a plurality of memory cells each comprising a switching transistor and a storage capacitor, wherein the storage capacitor comprises a lower electrode provided over one of the source and drain regions of the switching transistor and held in contact therewith, a dielectric film structure covering the lower electrode, and an upper electrode held in contact with the dielectric film structure and having at least one side edge substantially self-aligned with one side edge of the lower electrode without any tolerance.

REFERENCES:
patent: 5028990 (1991-07-01), Kotaki et al.

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