Dynamic random access memory device including a stack capacitor

Details Dynamic random access memory device including a stack capacitor Dynamic random access memory device including a stack capacitor

1989-12-29

1990-08-28

Hecker, Stuart N.

Static information storage and retrieval

Systems using particular element

Semiconductive

365149, 357 236, 357 41, G11C 1134, G11C 1124

Patent

active

049531263

ABSTRACT:
A Dynamic Random Access Memory device includes bit lines formed on an interlayer insulation film which covers gate electrodes on an insulation film on a semiconductor substrate. Each bit line is in contact with the corresponding source region formed in the substrate through an opening in the insulation films. Another insulation film is formed so as to cover the bit lines. A storage electrode is formed on the insulation film covering the bit line, and is in contact with a drain region in the substrate through another opening in the insulation films. The bit line has a vertical layer level lower than that of the storage electrode. The storage electrode is covered with a dielectric film, which is covered with an opposed electrode.

REFERENCES:
patent: 4742018 (1988-05-01), Kimura et al.
patent: 4794563 (1988-12-01), Maeda

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