Dynamic random access memory device having rampart structure out

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

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257634, 257758, H01L 2968, H01L 2710, H01L 2348, H01L 2906

Patent

active

051628813

ABSTRACT:
A semiconductor memory device is fabricated on a semiconductor substrate and comprises a memory cell array having a plurality of memory cells and located in a predetermined cell area of the semiconductor substrate, a rampart structure formed outside the memory cell array and having an outer wall gently sloping down, an upper insulating layer convering the memory cells and the rampart structure, and at least one wiring layer formed on the upper insulating layer and extending over at least one of the memory cells and the rampart structure, whereby the wiring layer is prevented from non-conformal step coverage and any disconnection.

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