Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1990-08-24
1992-11-10
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257634, 257758, H01L 2968, H01L 2710, H01L 2348, H01L 2906
Patent
active
051628813
ABSTRACT:
A semiconductor memory device is fabricated on a semiconductor substrate and comprises a memory cell array having a plurality of memory cells and located in a predetermined cell area of the semiconductor substrate, a rampart structure formed outside the memory cell array and having an outer wall gently sloping down, an upper insulating layer convering the memory cells and the rampart structure, and at least one wiring layer formed on the upper insulating layer and extending over at least one of the memory cells and the rampart structure, whereby the wiring layer is prevented from non-conformal step coverage and any disconnection.
NEC Corporation
Prenty Mark V.
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