Dynamic random access memory device equipped with dummy cells im

Static information storage and retrieval – Read/write circuit – Differential sensing

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365190, 365205, 365208, G11C 700

Patent

active

054854270

ABSTRACT:
A shared sense amplifier circuit incorporated in a dynamic random access memory device is coupled at input/output nodes with dummy cells implemented by n-channel enhancement type field effect transistors for pulling one of the input/output nodes down upon access to one of the memory cells, and one of the enhancement type dummy cells rapidly turns off so that undershoot takes place at the associated input/output node due to channel resistance between the shared sense amplifier circuit and a bit line pair, thereby enlarging differential voltage applied between the input/output nodes of the shared sense amplifier circuit.

REFERENCES:
patent: 4669063 (1987-05-01), Kirsch
patent: 4853897 (1989-08-01), Nogami et al.
patent: 4947376 (1990-08-01), Arimoto et al.

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