Static information storage and retrieval – Read/write circuit – Differential sensing
Patent
1993-12-07
1995-11-21
Yoo, Do Hyun
Static information storage and retrieval
Read/write circuit
Differential sensing
365202, 365203, G11C 700
Patent
active
054693950
ABSTRACT:
A memory cell of a dynamic random access memory device is implemented by a series combination of a switching transistor and a storage capacitor connected between a bit line and a cell plate line, and a data bit stored in the storage capacitor produces a first potential difference indicative of the data bit between the bit line and another bit line paired therewith as well as a second potential difference between the cell plate of the storage capacitor and a cell plate line isolated therefrom, wherein a differential amplifier increases the second potential difference upon completion of a sense amplification on the first potential difference, thereby boosting the voltage level at the accumulating electrode of the storage capacitor while the bit lines and the cell plate line is being precharged again.
REFERENCES:
patent: 4873664 (1989-10-01), Eaton, Jr.
patent: 5303183 (1994-04-01), Asakura
patent: 5351215 (1994-09-01), Tanabe
patent: 5353255 (1994-10-01), Komuro
Komuro Toshio
Kuwabara Shinichi
NEC Corporation
Yoo Do Hyun
LandOfFree
Dynamic random access memory device equipped with diferential am does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Dynamic random access memory device equipped with diferential am, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dynamic random access memory device equipped with diferential am will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1143147