Dynamic random access memory device comprising memory cells havi

Details Dynamic random access memory device comprising memory cells havi Dynamic random access memory device comprising memory cells havi

1996-10-21

1997-12-02

Monin, Donald

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257309, 257377, 257499, 257503, H01L 2978

Patent

active

056939701

ABSTRACT:
A polycrystal silicon layer is used to a cell plate of a capacitor in a memory cell portion including a plurality of memory cells, and a Si.sub.3 N.sub.4 film layer is used to form a capacitor above a first transistor in the memory cell. The polycrystal silicon layer and Si.sub.3 N.sub.4 film layer formed above a second transistor in a peripheral circuit are simultaneously removed by an etching method during the same process. Therefore an aspect ratio and a shape of a contact hole in the peripheral circuit are improved, and thus the step coverage of the wiring in the peripheral circuit can be improved.

REFERENCES:
patent: 4327476 (1982-05-01), Iwai et al.
patent: 4742018 (1988-05-01), Kimura et al.
patent: 4784969 (1988-11-01), Nitayama
patent: 4845544 (1989-07-01), Shimizu
patent: 4905064 (1990-02-01), Yabu et al.
patent: 4953126 (1990-08-01), Ema

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