Dynamic random access memory device and operating method therefo

Static information storage and retrieval – Read/write circuit – Differential sensing

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365149, 365205, G11C 700

Patent

active

049166662

ABSTRACT:
In a DRAM device in accordance with the present invention, when a memory cell is selected for reading or writing data, at least one of the bit lines adjacent to the bit lines related with the selected memory cell is not selected simultaneously. Consequently, loss in a sense margin due to capacitance coupling between adjacent bit lines can be reduced.

REFERENCES:
patent: 4476547 (1984-10-01), Miyasaka
patent: 4748596 (1988-05-01), Ogura et al.

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