Dynamic random access memory device and method of producing same

Details Dynamic random access memory device and method of producing same Dynamic random access memory device and method of producing same

1994-10-26

1997-07-22

Monin, Donald

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257311, H01L 2968, H01L 2978

Patent

active

056506473

ABSTRACT:
A dynamic random access memory device includes a storage capacitor having a plurality of stacked conductive films which form a storage electrode. A gap is formed between elevationally adjacent conductive films so as to surround the storage electrode. A gap is also formed between an insulating film which covers a gate electrode for insulation and a lowermost film of the storage electrode. Connection between the adjacent films may be established so that an uppermost film elevationally extends so as to make contact with a drain region. Also, connection can be established so that an upper film is mounted directly on an lower film. An end portion of the film may be thicker than the other portion thereof. The stacked film structure may be produced by alternatively forming a film made of a material different from the insulating film covering the gate electrode, and a conductive film.

REFERENCES:
patent: 4475118 (1984-10-01), Klein et al.
patent: 4649406 (1987-03-01), Takemae et al.
patent: 4700457 (1987-10-01), Matsukawa
patent: 4742018 (1988-05-01), Kimura et al.
patent: 4855801 (1989-08-01), Kuesters
International Electronic Devices Meeting "Stacked Capacitor Cells for High-density dynamic RAMs", Dec. 11-14, 1988.
Article published in Nikkei Microdevices--Aug. 1994, pp. 30-39 (foreign article).

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