Dynamic random access memory device and electronic systems

Details Dynamic random access memory device and electronic systems Dynamic random access memory device and electronic systems

2011-08-16

2011-08-16

Jackson, Jr., Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S306000, C257SE27090, C257SE21627, C257SE21649

Reexamination Certificate

active

07999330

ABSTRACT:
The invention includes methods of utilizing compositions containing iridium and tantalum in semiconductor constructions, and includes semiconductor constructions comprising compositions containing iridium and tantalum. The compositions containing iridium and tantalum can be utilized as barrier materials, and in some aspects can be utilized as barriers to copper diffusion.

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