Static information storage and retrieval – Systems using particular element – Semiconductive
Patent
1992-06-16
1994-11-15
LaRoche, Eugene R.
Static information storage and retrieval
Systems using particular element
Semiconductive
365149, 365177, 365180, 257 76, 257110, 257187, 257197, 257198, H01L 29161
Patent
active
053654773
ABSTRACT:
A vertically integrated DRAM cell having a storage time of at least 4.5 hours at room temperature, formed from a wide-bandgap semiconductor such as GaAs or AlGaAs, in which an n-p-n bipolar access transistor is merged with a p-n-p storage capacitor, with the middle p-n layers being common to both. Similarly, a p-n-p transistor can be merged with an n-p-n storage capacitor.
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Cooper, Jr. James A.
Melloch Michael R.
Stellwag Theresa B.
LaRoche Eugene R.
Le Vu
McCarthy William F.
McDonald Thomas E.
The United States of America as represented by the Secretary of
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