Dynamic random access memory circuitry and integrated circuitry

Details Dynamic random access memory circuitry and integrated circuitry Dynamic random access memory circuitry and integrated circuitry

2007-10-23

2007-10-23

Nguyen, Thanh (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S774000, C257S257000, C257S027000

Reexamination Certificate

active

11384853

ABSTRACT:
A method of forming a conductive contact to a conductive structure includes forming a conductive structure received within and projecting outwardly from a first insulative material. A second different insulative material is deposited. The second insulative material is anisotropically etched effective to form a sidewall etch stop for the conductive structure. A third insulative material is deposited over the conductive structure and the sidewall etch stop. The third insulative material is different in composition from the second insulative material. A contact opening is etched through the third insulative material to the conductive structure using an etch chemistry which is substantially selective to the second insulative material of the sidewall etch stop. Integrated circuitry independent of the method of fabrication is disclosed.

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