Static information storage and retrieval – Systems using particular element – Capacitors
Reexamination Certificate
2008-04-24
2010-02-23
Auduong, Gene N. (Department: 2827)
Static information storage and retrieval
Systems using particular element
Capacitors
C365S210100
Reexamination Certificate
active
07668003
ABSTRACT:
Disclosed is a DRAM circuit that incorporates an improved reference cell, has half the capacitance of the memory cell, does not require a particular reference voltage, and can be formed using the same fabrication processes as the memory cell. This DRAM circuit comprises a memory cell with a single trench capacitor and a reference cell having two trench capacitors. The two reference cell trench capacitors are connected in series through a merged buried capacitor plate such that they provide half the capacitance of the memory cell trench capacitor. Additionally, the reference cell trench capacitors have essentially the same structure as the memory cell trench capacitor so that they can be formed in conjunction with the memory cell trench capacitor. Also disclosed are a design structure for the above-described memory circuit and a method for forming the above-described memory circuit.
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patent: 4700329 (1987-10-01), Yamada et al.
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patent: 5901077 (1999-05-01), Nishimura
patent: 6914840 (2005-07-01), Agata
patent: 2007/0242543 (2007-10-01), Romanovskyy et al.
Barth, Jr. John E.
Cheng Kangguo
Kim Hoki
Wang Geng
Auduong Gene N.
Gibb I.P. Law Firm LLC
International Business Machines - Corporation
LeStrange, Esq Michael J.
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