Dynamic random access memory circuit, design structure and...

Static information storage and retrieval – Systems using particular element – Capacitors

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S210100

Reexamination Certificate

active

07668003

ABSTRACT:
Disclosed is a DRAM circuit that incorporates an improved reference cell, has half the capacitance of the memory cell, does not require a particular reference voltage, and can be formed using the same fabrication processes as the memory cell. This DRAM circuit comprises a memory cell with a single trench capacitor and a reference cell having two trench capacitors. The two reference cell trench capacitors are connected in series through a merged buried capacitor plate such that they provide half the capacitance of the memory cell trench capacitor. Additionally, the reference cell trench capacitors have essentially the same structure as the memory cell trench capacitor so that they can be formed in conjunction with the memory cell trench capacitor. Also disclosed are a design structure for the above-described memory circuit and a method for forming the above-described memory circuit.

REFERENCES:
patent: 4700329 (1987-10-01), Yamada et al.
patent: 5617349 (1997-04-01), Koike
patent: 5901077 (1999-05-01), Nishimura
patent: 6914840 (2005-07-01), Agata
patent: 2007/0242543 (2007-10-01), Romanovskyy et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Dynamic random access memory circuit, design structure and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Dynamic random access memory circuit, design structure and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dynamic random access memory circuit, design structure and... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4169787

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.