Dynamic random access memory cell using field effect devices

Details Dynamic random access memory cell using field effect devices Dynamic random access memory cell using field effect devices

1981-05-20

1983-03-01

Hecker, Stuart N.

Static information storage and retrieval

Systems using particular element

Flip-flop

307279, G11C 1140

Patent

active

043756778

ABSTRACT:
The memory cell uses GaAs MESFET depletion mode devices, with a pair of cross coupled active transistors, a pair of load transistors, and a pair of access transistors. The level shifting required for Schottky Barriers is provided by capacitors in the cross coupling. A pair of initiation transistors are connected between the load and active transistors.

REFERENCES:
patent: 3849673 (1974-11-01), Koo
patent: 4003035 (1977-01-01), Hoffman et al.

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