Dynamic random access memory cell and fabricating method...

Details Dynamic random access memory cell and fabricating method... Dynamic random access memory cell and fabricating method...

2007-10-02

2007-10-02

Nhu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000, C257S068000, C257SE21646, C257SE21655, C257SE21661, C257SE21665

Reexamination Certificate

active

11163600

ABSTRACT:
A method of fabricating a dynamic random access memory cell is provided. A substrate having a patterned mask layer thereon and a deep trench therein is provided. The patterned mask layer exposes the deep trench. A deep trench capacitor is formed inside the deep trench. Thereafter, a trench is formed in the substrate on one side of the deep trench capacitor. The trench exposes a portion of the upper electrode of the deep trench capacitor and a portion of the substrate. After that, a semiconductor strip is formed in the trench. A gate dielectric layer is formed over the substrate to cover the exposed semiconductor strip and the substrate. A gate is formed over the gate dielectric layer such that the gate and the semiconductor strip crosses over each other, and the gate-covered portion of the semiconductor strip serves as a channel region.

REFERENCES:
patent: 6037194 (2000-03-01), Bronner et al.
patent: 6040213 (2000-03-01), Canale et al.
patent: 6265279 (2001-07-01), Radens et al.
patent: 6426253 (2002-07-01), Tews et al.
patent: 7005341 (2006-02-01), Wu

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