Dynamic random access memory capacitor and method for fabricatin

Details Dynamic random access memory capacitor and method for fabricatin Dynamic random access memory capacitor and method for fabricatin

1996-06-07

1998-08-18

Fears, Terrell W.

Static information storage and retrieval

Systems using particular element

Capacitors

365 51, G11C 1300, G11C 1124

Patent

active

057966494

ABSTRACT:
A DRAM capacitor and a method for fabricating the same, capable of achieving an increase in surface area and thereby an increase in capacitance while reducing the topology, by simply forming a conduction layer, as a charge storage electrode, comprised of conduction spacers around a double-layer pin-shaped conduction layer pattern or a combination of a central conduction layer pattern and an outer conduction layer pattern having an upwardly-opened dome structure surrounding the central conduction layer pattern, using an etch rate difference between insulating films.

REFERENCES:
patent: 5126280 (1992-06-01), Chau et al.
patent: 5137842 (1992-08-01), Chau et al.
patent: 5403766 (1995-04-01), Miyhe
patent: 5432110 (1995-07-01), Keum et al.
patent: 5468670 (1995-11-01), Ryou
patent: 5623442 (1997-04-01), Gotou et al.

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