Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-06-30
1998-10-13
Wallace, Valencia
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257 71, 257206, 257296, 257905, 257907, H01L 2968, H01L 27108
Patent
active
058215921
ABSTRACT:
A dynamic random access memory array having an array of memory cells. Individual cells of the array are addressable by a plurality of word lines and a plurality of bit lines. The memory cells are disposed in active areas of the array. The array of memory cells includes a first strip of memory cells. The dynamic random access memory array includes a lower metal layer and an upper metal layer disposed above the lower metal layer. The dynamic random access memory array further includes a dielectric layer disposed between the lower metal layer and the upper metal layer. There is further included a first bit line of the plurality of bit lines which includes a lower metal first bit line portion implemented in the lower metal layer. The lower metal first bit line portion is coupled to a first plurality of memory cells of the first strip of memory cells. The first bit line also includes an upper metal first bit line portion implemented in the upper metal layer. The upper metal first bit line portion is coupled to the lower first metal bit line portion by a first contact through the dielectric layer. The first contact is disposed above one of the active areas.
REFERENCES:
patent: 5378906 (1995-01-01), Lee
patent: 5600162 (1997-02-01), Rosner
patent: 5747844 (1998-05-01), Aoki et al.
DeBrosse John
Hoenigschmid Heinz
Braden Stanton C.
International Business Machines - Corporation
Siemens Aktiengesellschaft
Wallace Valencia
LandOfFree
Dynamic random access memory arrays and methods therefor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Dynamic random access memory arrays and methods therefor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dynamic random access memory arrays and methods therefor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-315353