Static information storage and retrieval – Read/write circuit – Signals
Patent
1990-06-20
1991-05-07
Moffitt, James W.
Static information storage and retrieval
Read/write circuit
Signals
365193, 365233, G11C 700
Patent
active
050142453
ABSTRACT:
A dynamic random access memory includes switching transistors connected between bit lines and a sensing amplifier. The switching transistors are made non-conductive during a first period. An internal write enable signal is supplied for a predetermined period to a data input circuit to write a data into a memory cell of the dynamic random access memory. The predetermined period is controlled to terminate after the termination of the first period at an early write mode.
REFERENCES:
patent: 4653029 (1987-03-01), Sato
patent: 4757476 (1988-07-01), Fujishima et al.
National Convention Record-1986; The Institute of Electronics and Communication Engineers of Japan; Part 2, pp. 2-247.
Furuyama Tohru
Muroka Kazuyoshi
Ohsawa Takashi
Kabushiki Kaisha Toshiba
Moffitt James W.
LandOfFree
Dynamic random access memory and method for writing data thereto does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Dynamic random access memory and method for writing data thereto, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dynamic random access memory and method for writing data thereto will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-944958