Dynamic random access memory and method for writing data thereto

Static information storage and retrieval – Read/write circuit – Signals

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365193, 365233, G11C 700

Patent

active

050142453

ABSTRACT:
A dynamic random access memory includes switching transistors connected between bit lines and a sensing amplifier. The switching transistors are made non-conductive during a first period. An internal write enable signal is supplied for a predetermined period to a data input circuit to write a data into a memory cell of the dynamic random access memory. The predetermined period is controlled to terminate after the termination of the first period at an early write mode.

REFERENCES:
patent: 4653029 (1987-03-01), Sato
patent: 4757476 (1988-07-01), Fujishima et al.
National Convention Record-1986; The Institute of Electronics and Communication Engineers of Japan; Part 2, pp. 2-247.

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