Dynamic random access memory

Static information storage and retrieval – Read/write circuit

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36523001, 3652385, G11C 700, G11C 800

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active

049455176

ABSTRACT:
A semiconductor dynamic RAM provided with an I/O load (5) rendered inactive during a writing cycle comprises a monostable multivibrator (16) for receiving a read/write indicating signal W for indicating reading and writing data from and into a memory cell (2) and outputting a signal W having a shorter duration than that of the signal W at a down edge of the signal W as a trigger. The output signal W of the monostable multivibrator (16) is supplied as a control signal for rendering the I/O load (5) inactive.

REFERENCES:
patent: 4539661 (1985-09-01), Oritani
patent: 4638461 (1987-01-01), Yonezu et al.
patent: 4649522 (1987-03-01), Kirsch
patent: 4658381 (1987-04-01), Reed et al.
patent: 4661931 (1987-04-01), Flannagan et al.
patent: 4722074 (1988-01-01), Fujishima
patent: 4751683 (1988-06-01), Wada et al.
IEEE J. Sol. St. Circuits: "A 1-Mbit CMOS Dynamic RAM with a Divided Bitline Matrix Architecture", by R. Taylor, vol. SC-20, No. 5, Oct. 1985, pp. 894-902.
Integrated JFET/IGFET Memory Cell; Penoyer; IBM Tech. Discl. Bull.; vol. 27, No. 6; Nov. 1984.
IEEE Journal of Solid-State Circuits, vol. SC-20, No. 5, Oct. 1985, S. 929-933.

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