Dynamic RAM trench capacitor device with contact strap

Details Dynamic RAM trench capacitor device with contact strap Dynamic RAM trench capacitor device with contact strap

1993-08-26

1997-02-25

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257301, 257297, 257306, H01L 2978

Patent

active

056061897

ABSTRACT:
A FEC-DRAM of 3 elements/2 bits type having a stack capacitor of increased capacitance to ensure integration with an increased density. The stack capacitor is formed as embedded in a trench, and local wiring is provided to form an electric contact on an element isolation region. When required, the stack capacitor is made to extend onto a word line region. The stack capacitor is given an increased surface area and a greater capacitance, consequently reducing the area occupied and making it possible to provide DRAMs with a higher packing density.

REFERENCES:
patent: 4958318 (1990-09-01), Harari
patent: 5012308 (1991-04-01), Hieda
IBM Technical Disclosure Bulletin, vol. 31, No. 7, Dec. 1988 pp. 409-417.
IBM Technical Disclosure Bulletin, vol. 23, No. 4, Sep. 1980, pp. 1447-1448 .

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