Static information storage and retrieval – Systems using particular element – Capacitors
Reexamination Certificate
2006-08-08
2006-08-08
Auduong, Gene N (Department: 2827)
Static information storage and retrieval
Systems using particular element
Capacitors
C365S063000, C365S187000
Reexamination Certificate
active
07088606
ABSTRACT:
Dynamic RAM (DRAM) cells are provided. Data can be read from a DRAM cell without draining the stored charge stored in the cell. During a read cycle, current flows between a Read Bit line and a supply voltage, and charge is not drained directly from the DRAM storage node. Each DRAM cell has a small number of transistors. The DRAM cell can be used to store configuration data on a programmable integrated circuits (IC). Pass gates are used on programmable ICs to drive signals across the chip. Data stored in DRAM cells is provided directly to the pass gates at the full supply voltage to prevent signal degradation.
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Altera Corporation
Auduong Gene N
Townsend and Townsend / and Crew LLP
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