Dynamic ram, having an improved large capacitance

Details Dynamic ram, having an improved large capacitance Dynamic ram, having an improved large capacitance

1991-01-07

1992-08-11

James, Andrew J.

357 45, 357 71, 357 59, H01L 2978, H01L 2710, H01L 2715

Patent

active

051384124

ABSTRACT:
A dynamic RAM comprises a semiconductor substrate, first and second MOS transistor formed on said semiconductor substrate, each having a source, a drain, and a gate, a first insulation film formed on said first and second MOS transistors, a first electrode formed on said first insulation film, for accumulating an electrical charge, the first electrode extending through a first hole made in the first insulation film and connected to one of the source and drain of said first MOS transistor, a second electrode formed on the first insulation film, for accumulating an electrical charge, the second electrode extending through a second hole made in the first insulation film and connected to one of the source and drain of the second MOS transistor, and at least one part of the second electrode being spaced apart from, located above, and overlapping part of the first electrode, first and second capacitor-insulating films formed on the first and second electrodes, respectively, and a capacitor electrode fromed on the first and second capacitor-insulating films and having a portion interposed between the overlapping parts of the first and second electrodes.

REFERENCES:
patent: 4460911 (1984-07-01), Salters
patent: 4700457 (1987-10-01), Matsukawa
patent: 4896197 (1990-01-01), Mashiko
patent: 4974100 (1990-11-01), Taguchi et al.
patent: 5053351 (1991-10-01), Fazan et al.
Extended Abstracts of the 20th Conference on Solid State Devices and Materials, T. Kisu et al; Aug. 24-26, 1988; pp. 581-584.
International Electron Devices Meeting Technical Digest; T. Ema et al; pp. 592-595; Dec. 11-14, 1988.
Extended Abstract of the 20th (1988 International) Conference on Solid State Devices and Materials, Tokyo, 1988, pp. 581-584.

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