Electron beam exposure method

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Details

364488, 2504922, 250398, G06F 1560, G06F 1520

Patent

active

050863983

ABSTRACT:
An electron beam exposure method incorporating a proximity effect correction for a pattern including large-area drawing patterns and small-area drawing patterns. The method includes dividing each large-area drawing pattern into a plurality of unit patterns and calculating the optimum electron beam exposure for each unit pattern and for each small-area drawing pattern. The calculation includes a proximity effect correction for each unit pattern and each small-area drawing pattern adjacent unit patterns having the same calculated exposures are merged into larger areas and drawing data based on the merged unit patterns, the unit patterns not merged, and the small-area drawing patterns is generated. The pattern is exposed to an electron beam that is controlled in accordance with the drawing data.

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Mihir Parikh and Donald E. Schreiber, Pattern Partitioning For Enhanced Proximity-Effect Corrections In Electron-Beam Lithography, Sep. 1980, pp. 530-536.

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