Dynamic RAM having 3-dimensional memory cell structure

Details Dynamic RAM having 3-dimensional memory cell structure Dynamic RAM having 3-dimensional memory cell structure

1991-01-10

1992-11-24

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257401, H01L 2968, H01L 2702, H01L 2906

Patent

active

051667622

ABSTRACT:
A semiconductor region of a first conductivity type is formed in a column configuration on a semiconductor substrate, and acts as a source region (or a drain region) and a storage node electrode. A second semiconductor region of the first conductivity type is formed with a capacitor insulation film disposed between it and the side wall of the first semiconductor region and acts as a cell plate electrode. A third semiconductor region of a second conductivity type which is formed in an annular configuration is formed on the upper portion of the first semiconductor region and acts as a channel region. A first conductive layer is formed with a gate insulation film disposed between the first conductive layer and each of the inner and outer side walls of the third semiconductor region and acts as a transfer gate electrode. A fourth semiconductor region of the first conductivity type is formed in an area near the end portion of the opening of the third semiconductor region which is formed in the annular configuration and acts as a drain region (or a source region). A second conductive layer is formed in contact with the fourth semiconductor region and acts as a bit line.

REFERENCES:
patent: 4920389 (1990-04-01), Itoh
patent: 4975754 (1990-12-01), Ishiuchi et al.
patent: 5001526 (1991-03-01), Gotou

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