Dynamic RAM, dynamic RAM plate voltage setting method, and infor

Details Dynamic RAM, dynamic RAM plate voltage setting method, and infor Dynamic RAM, dynamic RAM plate voltage setting method, and infor

1994-02-16

1995-10-17

Nelms, David C.

Static information storage and retrieval

Systems using particular element

Capacitors

365201, 3652257, 36518909, G11C 700, G11C 1140

Patent

active

054596840

ABSTRACT:
A dynamic RAM enhanced in integration and storage capacity, a method of setting a plate voltage of the dynamic RAM, and an information processing system reduced in size and enhanced in performance are provided. The plate voltage is set such that a leakage current of an information storage capacitor when a bit line voltage is positive relative to the plate voltage is made substantially equal to a leakage current of the capacitor when the bit line voltage is negative relative to the plate voltage. For this plate voltage setting, a plate voltage generating circuit is provided with an output voltage adjusting capability. A monitoring capacitor is formed on the same semiconductor wafer on which the information storage capacitor is formed. This monitoring capacitor is formed by a same method by which the information storage capacitor is formed, and is made of a same material of which the information storage capacitor is made. The monitoring capacitor is tested in a wafer probing process. Based on a measurement result, the plate voltage is set to an optimum level. The information processing system is constituted with the dynamic RAM as its memory device having the optimum plate voltage.

REFERENCES:
patent: 4839865 (1989-06-01), Sato et al.
patent: 5274586 (1993-12-01), Matsukawa
patent: 5317532 (1994-05-01), Ochii
H. Shinriki et al., "UV-O.sup.3 and Dry-O.sub.2 : Two-Step Annealed Chemical Vapor-Deposited Ta.sub.2 O.sub.5 Films for Storage Dielectrics of 64-Mb DRAM's", IEEE Transactions on Electron Devices, vol. 38, No. 3, Mar. 1991.

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