Dynamic RAM and information processing system using the same

Static information storage and retrieval – Systems using particular element – Capacitors

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365205, 365203, G11C 1124

Patent

active

054266033

ABSTRACT:
A dynamic RAM is provided using a sense amplifier compensating for the disparities of characteristics for paired MOSFET's. With this arrangement parasitic capacitance of the bit lines can be increased to be at least 20 times the capacitance of the memory cells. Each bit line is bisected by a switch MOSFET and is disconnected thereby as needed. A plurality of sets of memory arrays are furnished, each including a switch MOSFET for interconnecting common source lines to which the sense amplifier is connected. This permits recycling of the charges of the common source lines.

REFERENCES:
Threshold Difference Compensated Sense Amplifier-IEEE, JSSC vol. SC-14, No. 6, Dec. 1979 pp. 1066-1070.

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