Dynamic precharge redundant circuit for semiconductor memory dev

Static information storage and retrieval – Read/write circuit – Bad bit

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

3652257, 3651895, G11C 700

Patent

active

061669741

ABSTRACT:
A dynamic precharge redundant circuit for a semiconductor memory device. A PMOS transistor, a fuse, a first, second and third inverters, a first switch and a second switch are applied. A source of the PMOS transistor is coupled to a voltage supply, while a gate of the PMOS transistor is to receive a precharge signal. The fuse has a ground terminal and a terminal coupled to the drain of the PMOS transistor of which the drain is further coupled to an input terminal of the first inverter. The fuse is also coupled to a column address signal. The first inverter has an output terminal coupled to an input terminal of the first switch. The second inverter has an input terminal coupled to an output terminal of the first switch and an output terminal coupled to an input terminal of the third inverter, so as to output a bit-switch control signal. An input terminal of the second switch is coupled to an output terminal of the third inverter, while an output terminal of the second switch is coupled to both the output terminal of the first switch and the input terminal of the second inverter. Thus, an error caused by the generation of an interference signal of the bit-switch control signal is prevented, so as to prevent from damaging data of the bit line sense amplifier.

REFERENCES:
patent: 5583463 (1996-12-01), Merritt
patent: 5841708 (1998-11-01), Nagata
patent: 6052767 (2000-04-01), Matuki

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Dynamic precharge redundant circuit for semiconductor memory dev does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Dynamic precharge redundant circuit for semiconductor memory dev, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dynamic precharge redundant circuit for semiconductor memory dev will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1002382

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.