Dynamic multistate memory write driver

Details Dynamic multistate memory write driver Dynamic multistate memory write driver

2009-08-19

2011-12-13

Phung, Anh (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S158000, C365S173000, C365S209000

Reexamination Certificate

active

08077508

ABSTRACT:
A circuit includes, in part, a multitude of magnetic random access memory cells, one or more column decoders, one or more row decoders, and a write driver circuit. The write driver circuit is responsive to data signal as well as to read/write signals. During writing of a first data to a selected magnetic random access memory cell, the write driver circuit causes the first signal line to be at a second voltage and the second signal line to be at the first voltage. The second voltage is greater than the first voltage. During writing of a second data to the selected magnetic random access memory cell, the write driver circuit cause the first signal line to be at a third voltage and the second signal line to be at the second voltage. The third voltage is smaller than the first voltage.

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Notice of Allowance for U.S. Appl. No. 12/558,451 mailed on Aug. 11, 2011.

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