Dynamic monolithic memory

Static information storage and retrieval – Systems using particular element – Capacitors

Patent

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Details

365189, 365203, G11C 700, G11C 1124

Patent

active

043995195

ABSTRACT:
In a dynamic monolithic memory including a plurality of memory cells each of which comprises a capacitance and a switching field-effect transistor, the source and drain electrodes of the transistor are connected to a data line and the capacitance, respectively. Upon reading a memory cell, the transistor is switched on when difference between the data line voltage and the word line voltage applied to a gate electrode of the transistor exceeds a threshold voltage of the transistor.

REFERENCES:
patent: 4112508 (1978-09-01), Itoh
patent: 4138740 (1979-02-01), Itoh

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