Dynamic memory with single-cycle writing of a field of logic sta

Static information storage and retrieval – Systems using particular element – Capacitors

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3651899, G11C 1124

Patent

active

048456730

ABSTRACT:
The present invention pertains to a dynamic memory. The voltage of the hot spot of the storage capacitor is carried to a value such that all the cells comprise the same logic value, owing to a potential generator. It is thus possible to write and read bit fields on a large-capacity memory at high speed. This device has applications with respect to image memories and for manufacturing tests.

REFERENCES:
patent: 4259729 (1981-03-01), Tokushige
patent: 4491936 (1985-01-01), Eaton et al.
patent: 4593382 (1986-06-01), Fujishima et al.
IBM Technical Disclosure Bulletin, vol. 27, No. 6, Nov. 1984, pp. 3469-3470, New York, U.S.; P. Nack et al.; "Substrate Voltage Bump Test for Dynamic Ram Memory Devices".
Research Disclosure, No. 254, Jun. 1985, p. 290, No. 25423, Emsworth, Hampshire, GB; "1D Cell Memory System with Pulsed Storage Plate for Multiplexed Bit Lines".

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