Static information storage and retrieval – Systems using particular element – Capacitors
Patent
1982-09-24
1986-08-12
Moffitt, James W.
Static information storage and retrieval
Systems using particular element
Capacitors
365189, 365210, G11C 1124
Patent
active
046060103
ABSTRACT:
A dynamic memory device has a plurality of column unit arrangements. Each of the column unit arrangements includes first and third bit lines connected through first and third switching transistors to a first input terminal of a sense amplifier and second and fourth bit lines connected through second and fourth switching transistors to a second input terminal of the sense amplifier. The other ends of the third and fourth bit lines are connected through fifth and sixth switching transistors to a corresponding data line. A switching control signal cuts off at least one of the first switching transistor group including the first and second switching transistors and the second transistor group including the third and fourth switching transistors during only a given period of time containing time points before and after a time point at which the fifth and sixth switching transistors are turned on when data is written into a memory cell selected from memory cells connected to the bit lines.
REFERENCES:
patent: 4045783 (1977-08-01), Harland
patent: 4363111 (1982-12-01), Heightley et al.
J. Y. Chan et al., "A 100 ns 5 V Only 64K.times.1 MOS Dynamic RAM," IEEE Journal of Solid-State Circuits, vol. SC-15, No. 5, (Oct. 1980), pp. 839-845.
S. Sheffield Eaton et al., "A 100ns 64K Dynamic RAM Using Redundancy Techniques", ISSCC Digest of Technical Papers, pp. 84-85, (Feb. 1981).
Moffitt James W.
Tokyo Shibaura Denki Kabushiki Kaisha
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