Dynamic memory cell with automatic refreshing

Details Dynamic memory cell with automatic refreshing Dynamic memory cell with automatic refreshing

1977-05-25

1978-09-05

Hecker, Stuart N.

Static information storage and retrieval

Systems using particular element

Semiconductive

307238, 365222, G11C 1140, G11C 700

Patent

active

041125100

ABSTRACT:
A dynamic memory cell with automatic refreshing is described which requires only three insulated gate field effect transistors (IGFETs). Binary datum is stored in the cell by maintaining the gate of the first IGFET high for a one and low for a zero. The second IFGET is used for cell selection in the read and write operations, and is in series with the first transistor. The third IGFET has one gate electrode, but the channel region of this transistor has two regions, and the surface potential vs. gate voltage characteristics of these two regions differ. Regardless of the datum stored in the cell, pulsing the gate of this third transistor refreshes the memory cell.

REFERENCES:
patent: 3699544 (1972-10-01), Joynson et al.
patent: 3878404 (1975-04-01), Walther et al.

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