Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1992-12-04
1994-08-09
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257296, 257301, 257329, 257347, H01L 2968, H01L 2910
Patent
active
053369173
ABSTRACT:
A semiconductor device comprises a first insulating layer, a gate electrode formed on the insulating layer, a second insulating layer formed on the gate electrode, an opening formed through the second insulating layer, the gate electrode and the first insulating layer, a gate insulating layer formed to overlay the inner surface of the opening, a monocrystalline silicon layer formed on the gate insulating layer within the opening to oppose the gate electrode, a monocrystalline silicon layer formed within the opening to make contact with the monocrystalline silicon layer and oppose the first insulating layer, and a monocrystalline silicon layer formed within the opening to make contact with the monocrystalline silicon layer and oppose the second insulating layer.
REFERENCES:
patent: 4630088 (1986-12-01), Ogura et al.
patent: 4673962 (1987-06-01), Chatterjee et al.
patent: 4974060 (1990-11-01), Ogasawara
patent: 5006909 (1991-04-01), Kosa
patent: 5166762 (1992-11-01), Yoshida
patent: 5225701 (1993-07-01), Shimizu et al.
Japanese Patent Disclosure (KOKAI) No. 1-198065, M. Ogasawara (Aug. 9, 1989).
Kabushiki Kaisha Toshiba
Prenty Mark V.
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