Dynamic memory cell and method of manufacturing same

Details Dynamic memory cell and method of manufacturing same Dynamic memory cell and method of manufacturing same

2006-03-21

2006-03-21

Tran, Mai-Huong (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000, C257S302000, C257S303000, C257S304000, C257S305000

Reexamination Certificate

active

07015526

ABSTRACT:
A memory device has a plurality of memory cells, wherein each memory cell has a trench capacitor formed in a semiconductor substrate and an access transistor for it. Each access transistor has a first contact region connected to an internal electrode of the trench capacitor, a second contact region to a bit line and a control electrode region, wherein the control electrode regions of neighboring access transistors are connected by a word line formed in the semiconductor substrate.

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Buot, F.A., et al., “Dependence of Gate Control on the Aspect Ratio in Metal/Metal-Oxide/Metal Tunnel Transistors,” Journal of Applied Physics, vol. 84, No. 2, Jul. 15, 1998, pp. 1133-1139.
Widmann, D., et al., “Technologie hochintegrierter Schaltungen,” 2ndEd., Ch. 8.4.2, pp. 290-293.

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