Dynamic memory cell

Details Dynamic memory cell Dynamic memory cell

1989-11-15

1991-07-02

Hecker, Stuart N.

Static information storage and retrieval

Read/write circuit

Data refresh

365149, G11C 700, G11C 1124

Patent

active

050291408

ABSTRACT:
A self-refreshing dynamic memory cell comprises a first MOSFET and a first capacitor forming a classical dynamic memory cell, a first diode connected with the power supply and the first capacitor, which is under small reverse voltage when the first capacitor is slightly discharged due to a leakage currently and in which reverse current compensates leakage current since it flows in opposite direction, together with additional circuit means which compensates unwanted reverse current through the first diode when the first capacitor is coupled to a positive voltage through the first MOSFET and which tends to charge the first capacitor and change the stored data.

REFERENCES:
patent: 3618053 (1971-11-01), Hudson
patent: 3955181 (1976-05-01), Raymond, Jr.
patent: 4037243 (1977-07-01), Hoffman et al.
patent: 4112510 (1978-09-01), Baker
patent: 4161791 (1979-07-01), Leach
patent: 4682306 (1987-07-01), Sakurai et al.

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