Static information storage and retrieval – Systems using particular element – Capacitors
Patent
1979-04-20
1981-03-31
Hecker, Stuart N.
Static information storage and retrieval
Systems using particular element
Capacitors
365226, G11C 1124
Patent
active
042597293
ABSTRACT:
A memory stable against variation of an external supply voltage is disclosed. The memory comprises a plurality of memory cells, each of memory cells including an insulated-gate field-effect transistor having a gate coupled to a word line, a source and a drain, one of the source and drain being coupled to a digit line, and an information storage capacitor having a first electrode coupled to the other of the source and drain of the transistor and a second electrode, and means for biasing the second electrode with a stabilized voltage.
REFERENCES:
patent: 3387286 (1968-06-01), Dennard
patent: 4086662 (1978-04-01), Itoh
patent: 4163243 (1979-07-01), Kamins et al.
Coe et al, Enter the 16,384-bit RAM, Electronics, 2/19/76, pp. 116-121.
Gray et al, Power Supply Stabilization Circuit, IBM Technical Disclosure Bulletin, vol. 21, No. 4, 9/78, pp. 1384-1385.
Boosntra et al., "A 4896-6 One-Transistor Per Bit Random-Access Memory with Internal Timing and Low Dissipation", IEEE Journal of Solid State Circuits, 10/73, pp. 305-310, vol. sc-8, No. 5.
Hecker Stuart N.
Nippon Electric Co. Ltd.
LandOfFree
Dynamic memory does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Dynamic memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dynamic memory will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2247473