Dynamic memory

Details Dynamic memory Dynamic memory

1986-04-24

1987-03-17

Fears, Terrell W.

Static information storage and retrieval

Read/write circuit

Differential sensing

365149, 365189, 365154, G11C 1300, G11C 1140

Patent

active

046513060

ABSTRACT:
When half-size dummy cells are used in a dynamic memory, it is difficult to increase the relative accuracy of the capacitors in the half-size dummy cells and the capacitors in memory cells. According to the present invention, a pair of full-size dummy cells is provided connected to a pair of bit lines. High-level and low-level signals amplified by the sense amplifier are written into the full-size dummy cells, the capacitors of the pair of full-size dummy cells are then short-circuited by a short-circuiting circuit, and the electric charges in the capacitors provide a reference level. This method does not need a generator circuit providing a voltage of 1/2 V.sub.CC (V.sub.CC : power-source voltage) which would necessitate a large quantity of power to drive it.

REFERENCES:
patent: 4493056 (1985-01-01), Mao
patent: 4547868 (1985-10-01), Childers et al.
"Sense Amplifier Design is Key to 1-Transistor Cell in 4,096-Bit Ram" Kuo et al., Electronics, Sep. 1973, pp. 116-121.
1972 IEEE International Solid-State Circuits Conference "Digest of Technical Papers", Feb. 1972, Storage Array and Sense/Refresh Circuit for Single-Transistor Memory Cells, K. U. Stein et al., pp. 56-57.
IEEE Journal of Solid-State Circuits, vol. SC15, No. 5, Oct. 1980, "A 100 ns 5 V Only 64K1 MOS Dynamic RAM" Chan et al., pp. 839-846.

Affiliated with

Also associated with

Rating

Dynamic memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Dynamic memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dynamic memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1792625