Dynamic logic circuit and self-timed pipelined datapath system

Electronic digital logic circuitry – Clocking or synchronizing of logic stages or gates – Field-effect transistor

Reexamination Certificate

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Details

C326S093000

Reexamination Certificate

active

06225827

ABSTRACT:

BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a dynamic logic circuit such as a DOMINO logic circuit and a npCMOS logic circuit capable of reducing the static leakage current in its inactive state, and also relates to a self-timed pipelined datapath system which adopts a plurality of combinational circuits therein formed by these dynamic circuits, and controls the active and inactive states thereof along with the data flowing order in response to asynchronous signals.
2. Description of the Related Art
Recently, the LSI circuits installed on communication equipment, for example, battery-operated portable communication devices dissipate more power with an increasing amount of information to be handled on them.
To address this problem, various techniques for lowering power dissipation have been researched and developed. As one example of such a conventional method, a self-timed pipelined datapath system as shown in
FIGS. 10 and 12
has been proposed to solve a large power dissipation problem caused by a distribution of clock signals and simultaneously choreographing a huge number of events that take place in a large-scale synchronous system (Jan M. Rabaey, “TIMING ISSUES IN DIGITAL CIRCUITS” in DIGITAL INTEGRATED CIRCUITS, Prentice Hall, 1996).
In the self-timed pipelined datapath system shown in
FIG. 10
, write enable signals EN
1
through EN
3
to be applied to registers REG
1
through REG
3
, respectively connected to combinational circuits
11
′ and
12
′, are generated in accordance with the state of data processing operation within the respective combinational circuits
11
′ and
12
′. For this reason, a conventional problem of the passing through of unprocessed data due to a clockskew phenomenon can be efficiently avoided, and the same effect can be obtained by a configuration of the self-timed pipelined datapath system shown in FIG.
12
. Furthermore, such self-timed pipelined datapath systems are quite effective for reducing power dissipation, as the combinational circuits adopted therein are activated and the issue of signals occurrs only on the arrival of data thereto. Note that the wording “issue” means a state change of a signal from “0” to “1” throughout the specification.
There have been proposed for use as dynamic circuits for the above-mentioned combinational circuits a DOMINO logic circuit (R. Krambeck et al., “High-Speed Compact Circuits with CMOS, “IEEE journal of Solid State Circuits, vol.SSC-17, no.3, pp. 614-619, June 1992) and npCMOS circuit (N. Goncalvez et al., NORA:A Racefree Dynamic CMOS Technique for Pipelined Logic Structures, “IEEE Journal of Solid State Circuits, vol. SSC-18, no.3, pp.261-266, June 1983).
In a DOMINO logic circuit as shown in
FIG. 9A
, nMOS transistors MN
51
and MN
52
configure a pull-down network
51
, and an nMOS transistor MN
55
also configures a pull-down network
53
. MP
51
and MP
52
are pMOS transistors for a precharging operation, and MN
53
and MN
56
are NMOS transistors for a discharging operation. pMOS transistor MP
53
and NMOS transistor MN
54
configure a CMOS inverter
52
, which transfers the data obtained by the pull-down network
51
at the preceding stage to the pull-down network
53
at the succeeding stage.
In the DOMINO logic circuit as shown above, when the controlling signal ST
1
is “0” (meaning the low voltage level throughout the specification), the transistors MP
51
and MP
52
perform a precharging operation, whereas when it becomes “1” (meaning the high voltage level throughout the specification), a logic operation (sampling operation) is performed.
In a DOMINO logic circuit as shown in
FIG. 9B
, pMOS transistors MP
62
and MP
63
configure a pull-up network
61
, a pMOS transistor MP
66
also configures a pull-up network
63
. MP
61
and MP
65
are pMOS transistors for charging operation, MN
61
and MN
63
are nMOS transistors for a pre-discharging operation. PMOS transistor MP
64
and nMOS transistor MN
62
configure a CMOS inverter
62
, which transfers the data obtained by the pull-up network
61
at the preceding stage to the pull-up network
63
at the succeeding stage.
In this DOMINO logic circuit, when the controlling signal ST
1
* (which is an inverted ST
1
signal) is “1”, a pre-discharging operation is performed by transistors MN
61
and MN
63
, whereas when it becomes “0”, a logic operation is performed.
In an npCMOS logic circuit as show in
FIG. 9C
, pMOS transistors MP
72
and MP
73
configure a pull-up network
71
, an nMOS transistor MN
72
configures a pull-down network
72
. MP
71
is a pMOS transistor for a charging operation, MP
74
is a pMOS transistor for a precharging operation, MN
71
is a nMOS transistor for a pre-discharging operation and MN
73
is a nMOS transistor for a discharging operation.
In this npCMOS logic circuit, when the controlling signal ST
1
* is “1” (meaning that the ST
1
signal is “0”), a pre-discharging operation is performed by the transistors MN
71
and a precharging operation is performed by the transistor MP
74
, whereas when it becomes “0” (meaning that the ST
1
becomes “1”), a logic operation is executed.
However, in the case of low supply voltage, if these dynamic circuits are adopted as the combinational circuits in the self-timed pipelined datapath system, and if the MOS transistors composing each of the dynamic circuits have low-threshold voltages so as to comply with the low supply voltage and to accelerate thereof operating speed thereof, a static leakage current is generated when the dynamic circuit is in an inactive state, namely, in a precharging or pre-discharging state. for phenomenon causes power dissipation in the system.
SUMMARY OF THE INVENTION
The present invention has been designed to solve the above-described problem, and thus, an object of the present invention is to provide a system which is capable of accelerating an operating speed of the dynamic logic circuit, while reducing the static leakage current at its precharging and pre-discharging states, which occupy the greatest part of operations performed in the entire circuit, so as to reduce the power dissipation.
In order to solve the aforementioned problems, a dynamic logic circuit according to a first embodiment of the present invention is constructed such that each of a plurality of unit dynamic logic circuits sequentially coupled in multi-stage fashion to construct a dynamic logic circuit includes: a logic circuit portion which is a pull-down network composed of one or more low-threshold nMOS transistors; a pMOS transistor for a precharging operation; and a high-threshold nMOS transistor for a discharging operation, wherein the plurality of unit dynamic logic circuits are configured as a DOMINO logic circuit by disposing a low-threshold CMOS inverter between the unit dynamic logic circuit at a preceding stage and the unit dynamic logic circuit at a succeeding stage.
A dynamic logic circuit according to a second embodiment of the present invention is constructed such that each of the plurality of unit dynamic logic circuits used in the dynamic logic circuit includes: a logic circuit portion which is a pull-up network composed of one or more low-threshold pMOS transistors; an nMOS transistor for a pre-discharging operation; and a high-threshold pMOS transistor for a charging operation, wherein the plurality of unit dynamic logic circuits are configured as a DOMINO logic circuit by disposing a low-threshold CMOS inverter between the unit dynamic logic circuit at a preceding stage and the unit dynamic logic circuit at a succeeding stage.
A dynamic logic circuit according to a third embodiment of the present invention is constructed such that each of the plurality of unit dynamic logic circuits used in the dynamic logic circuit comprises: a first unit dynamic logic circuit and a second unit dynamic logic circuit; wherein the first unit dynamic logic circuit includes; a logic circuit portion which is a pull-up network composed of low-threshold pMOS transistors; an nMOS transistor for a pre-discharging opera

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