Dynamic isolation of conductivity modulation states in integrate

Metal treatment – Compositions – Heat treating

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148187, 357 38, 357 91, H01L 754, H01L 29747, H01L 912

Patent

active

042240832

ABSTRACT:
Conductivity modulation states in a first component of a power integrated circuit are dynamically isolated from a second component of the integrated circuit having at least one common active region with the first component by selective irradiation of portions of the common regions between the components. Preferably the irradiation is accomplished by masking the component portions of the body with a radiation shield and irradiating selected portions of the common active regions between the component portions with a suitable radiation source. The radiation source is preferably an electron beam of an energy level between about 1 and 3 Mev, preferably where the irradiation is carried to a dosage between 1.times.10.sup.13 and 1.times.10.sup.15 e/cm.sup.2 and most desirably between 4.times.10.sup.13 and 2.times.10.sup.14 e/cm.sup.2. New high speed bilateral thyristors, reverse switching rectifiers and reverse conducting thyristors are also provided.

REFERENCES:
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patent: 3893153 (1975-07-01), Page et al.
patent: 3895430 (1975-07-01), Wilson et al.
patent: 3897273 (1975-07-01), Marsh et al.
patent: 3947864 (1976-03-01), Yatsuo et al.
patent: 4092660 (1978-05-01), Blocker

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