Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Fluid growth from gaseous state combined with preceding...
Reexamination Certificate
2007-02-27
2007-02-27
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Fluid growth from gaseous state combined with preceding...
C438S584000, C438S758000, C257SE21008, C257S017000
Reexamination Certificate
active
10950839
ABSTRACT:
A method of removing an edge bead of a coated material on a substrate. The substrate is rotated, and a fluid that solvates the coated material is delivered. The delivery of the fluid is directed radially inward on the substrate at a rate of between about three millimeters per second and about twenty millimeters per second until a desired innermost fluid delivery position on the substrate is attained. Immediately upon attaining the desired innermost fluid delivery position on the substrate, the delivery of the fluid is directed radially outward off the substrate at a rate of more than zero millimeters per second and less than about four millimeters per second. The rotation of the substrate is ceased.
REFERENCES:
patent: 6720263 (2004-04-01), Olgado et al.
patent: 6818066 (2004-11-01), Cheung
patent: 2004/0250839 (2004-12-01), Robertson et al.
Li Xiao
Whitefield Bruce J.
Young Roger Y. B.
LSI Logic Corporation
Luedeka Neely & Graham P.C.
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