Static information storage and retrieval – Read/write circuit – Data refresh
Reexamination Certificate
2011-06-14
2011-06-14
Nguyen, Viet Q (Department: 2827)
Static information storage and retrieval
Read/write circuit
Data refresh
C365S071000, C365S100000, C365S148000, C365S174000, C365S159000, C257S133000, C257S137000
Reexamination Certificate
active
07961540
ABSTRACT:
A dynamically-operating restoration circuit is used to apply a voltage or current restore pulse signal to thyristor-based memory cells and therein restore data in the cell using the internal positive feedback loop of the thyristor. In one example implementation, the internal positive feedback loop in the thyristor is used to restore the conducting state of a device after the thyristor current drops below the holding current. A pulse and/or periodic waveform are defined and applied to ensure that the thyristor is not released from its conducting state. The time average of the periodic restore current in the thyristor may be lower than the holding current threshold. While not necessarily limited to memory cells that are thyristor-based, various embodiments of the invention have been found to be the particularly useful for high-speed, low-power memory cells in which a thin capacitively-coupled thyristor is used to provide a bi-stable storage element.
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Cho Hyun-jin
Igehy Robert Homan
Nemati Farid
Nguyen Viet Q
T-RAM Semiconductor, Inc.
The Webostad Firm
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