Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...
Patent
1995-06-07
1999-02-23
Dang, Thi
Etching a substrate: processes
Gas phase etching of substrate
Application of energy to the gaseous etchant or to the...
216 71, 427569, 427577, 156345, 118723E, 118723I, H05H 100
Patent
active
058740147
ABSTRACT:
A method and apparatus for treating a work surface, wherein there is provided a chamber having a longitudinal axis and longitudinally extending electrically conductive sidewalls, at least one sidewall having at least one longitudinally extending gap that interrupts a current path through the sidewalls transverse to the longitudinal axis, and wherein the chamber is sealed to allow pressure inside the chamber to be controlled. Also provided is an axially-extending array of current-carrying conductors which at least partially encircle the chamber, are transverse to the longitudinal axis, and establish a magnetic field parallel to the longitudinal axis of the chamber, and a power supply connected to the conductor array and adapted to provide high-frequency current in the conductors to magnetically induce ionization of the gaseous material in the chamber and form a plasma sheath that surrounds and extends along the longitudinal axis and conforms to the sidewalls of the chamber, and wherein the work surface is exposed to the plasma sheath and extends in the direction of the longitudinal axis.
REFERENCES:
patent: 4486461 (1984-12-01), Ito et al.
patent: 4593644 (1986-06-01), Hanak
patent: 4661834 (1987-04-01), Varteresian et al.
patent: 4686113 (1987-08-01), Delfino et al.
patent: 4786352 (1988-11-01), Benzing
patent: 4990403 (1991-02-01), Ito
patent: 5199918 (1993-04-01), Kumar
patent: 5204145 (1993-04-01), Gasworth
patent: 5234529 (1993-08-01), Johnson
patent: 5275798 (1994-01-01), Aida
patent: 5288969 (1994-02-01), Wong et al.
The Institution of Electrical Engineers, pp. 47-55, Apr. 1959, A.E.Robson, et al., "Choice of Materials and Problems of Design of Heavy-Current Toroidal Discharge Tubes".
Burt James V.
David Moses M.
Hendry Robert C.
Robson Anthony E.
Rudder Ronald A.
Berkeley Scholars, Inc.
Dang Thi
Minnesota Mining and Manufacturing Company
Research Triangle Institute
LandOfFree
Durable plasma treatment apparatus and method does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Durable plasma treatment apparatus and method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Durable plasma treatment apparatus and method will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-303446