Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-01-15
2000-07-25
Everhart, Caridad
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438633, 438692, 438926, H01L 214763
Patent
active
060936312
ABSTRACT:
A method and apparatus is provided for planarizing damascene metallic circuit patterns of a plurality of discrete integrated circuit chips on a metal coated silicon wafer wherein the circuitry on the chips on the wafer are either designed to be within a defined high metal density circuit range and low density metal circuit range and/or to provide dummy circuitry in the damascene process to provide a substantially uniform circuit density over the chip and the wafer surface. It is preferred that each chip on the surface of the wafer be divided into a plurality of regions and that each region be provided with dummy metallization, if necessary, to provide a relatively uniform circuit density in that region and consequently on the wafer surface. The invention also contemplates adding dummy circuitry to the periphery of the wafer in areas which are not formed into chips (chip fragments). The invention also provides semiconductor wafers made using the method and/or apparatus of the invention.
REFERENCES:
patent: 4003772 (1977-01-01), Hanazono et al.
patent: 4491500 (1985-01-01), Michaud et al.
patent: 4770740 (1988-09-01), Tsuzuki et al.
patent: 5043294 (1991-08-01), Willer et al.
patent: 5081796 (1992-01-01), Schultz
patent: 5278105 (1994-01-01), Eden et al.
patent: 5423716 (1995-06-01), Strasbaugh
patent: 5529953 (1996-06-01), Shoda
patent: 5549212 (1996-08-01), Kanoh et al.
patent: 5602423 (1997-02-01), Jain
patent: 5899706 (1999-05-01), Kluwe et al.
patent: 5923563 (1999-07-01), Lavin et al.
patent: 5948573 (1999-09-01), Takahashi
MRS Bulletin, "Copper-Based Metallization in ULSI Structures", Aug. 1994, pp. 15-18.
Jaso Mark A.
Schnabel Rainer F.
Everhart Caridad
International Business Machines - Corporation
Tomaszewski John J.
LandOfFree
Dummy patterns for aluminum chemical polishing (CMP) does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Dummy patterns for aluminum chemical polishing (CMP), we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dummy patterns for aluminum chemical polishing (CMP) will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1336006