Dummy copper deprocessing

Details Dummy copper deprocessing Dummy copper deprocessing

2005-03-08

2005-03-08

Versteeg, Steven (Department: 1753)

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

C204S192350, C216S066000

Reexamination Certificate

active

06863787

ABSTRACT:
A method of improving focused ion beam milling particularly suitable for uniformly removing multiple layers of conductor and dielectric, such as the removal of multiple layers consisting of dummy copper pads and SiO2on a semiconductor device. Variable Pixel Milling is first used to more uniformly remove most of a layer of conductor and dielectric. The use of Variable Pixel Milling may also be used in conjunction with a technique whereby incoming ions pass through a sacrificial layer formed on the surface of the layer being removed in order to further increase uniformity of material removal. Focused ion beam sputtering in conjunction with an oxygen containing gas, such as H2O vapor or oxygen, is then used to smooth out the trench floor before the next layer is removed.

REFERENCES:
patent: 5188705 (1993-02-01), Swanson et al.
patent: 5435850 (1995-07-01), Rasmussen
patent: 5851413 (1998-12-01), Casella et al.
patent: 5958799 (1999-09-01), Russell et al.
patent: 6322672 (2001-11-01), Shuman et al.
patent: 6641705 (2003-11-01), Phaneuf et al.

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