Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-03-21
2006-03-21
Lindsay, Jr., Walter L. (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S383000, C257S387000
Reexamination Certificate
active
07015552
ABSTRACT:
A dual work function semiconductor structure with borderless contact and method of fabricating the same are presented. The structure may include a field effect transistor (FET) having a substantially cap-free gate and a conductive contact to a diffusion adjacent to the cap-free gate, wherein the conductive contact is borderless to the gate. Because the structure is a dual work function structure, the conductive contact is allowed to extend over the cap-free gate without being electrically connected thereto.
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Li Yu-jun
Tonti William R.
Ye Qiuyi
Heslin Rothenberg Farley & & Mesiti P.C.
International Business Machines - Corporation
Lindsay Jr. Walter L.
Radigan, Esq. Kevin P.
Sabo, Esq. William D.
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