Dual work function gate electrodes using doped polysilicon...

Details Dual work function gate electrodes using doped polysilicon... Dual work function gate electrodes using doped polysilicon...

2007-06-19

2007-06-19

Lee, Hsien-Ming (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

C257S338000, C257S350000, C438S199000, C438S216000

Reexamination Certificate

active

11463128

ABSTRACT:
A dielectric layer (50) is formed over a semiconductor (10) that contains a first region (20) and a second region (30). A polysilicon layer is formed over the dielectric layer (50) and over the first region (20) and the second region (30). The polysilicon layer can comprise 0 to 50 atomic percent of germanium. A metal layer is formed over the polysilicon layer and one of the regions and reacted with the underlying polysilicon layer to form a metal silicide or a metal germano silicide. The polysilicon and metal silicide or germano silicide regions are etched to form transistor gate regions (60) and (90) respectively. If desired a cladding layer (100) can be formed above the metal gate structures.

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