Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-12-14
2000-02-22
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257344, 257346, 257408, 257900, H01L 2976, H01L 2994, H01L 31062, H01L 31113, H01L 31119
Patent
active
060283394
ABSTRACT:
A dual work function CMOS device and method for producing the same is disclosed. The method includes: depositing a first layer of a doped material, either n-type or p-type, over a substrate to be doped; defining the areas that are to be oppositely doped; depositing a second layer of an oppositely doped material over the entire surface; and subjecting the entire CMOS device to a high temperature, drive-in anneal. The drive-in anneal accelerates the diffusion of the dopants into the adjacent areas, thereby doping the gate polysilicon and channels with the desired dopants. A nitride barrier layer may be utilized to prevent the second dopant from diffusing through the first layer and into the substrate beneath.
REFERENCES:
patent: 4755478 (1988-07-01), Abernathe et al.
patent: 5024960 (1991-06-01), Haken
patent: 5190888 (1993-03-01), Schwalke et al.
patent: 5234850 (1993-08-01), Liao
patent: 5254866 (1993-10-01), Ogog
patent: 5258645 (1993-11-01), Salo
patent: 5274261 (1993-12-01), Chen
patent: 5324974 (1994-06-01), Liao
patent: 5329138 (1994-07-01), Mitani et al.
patent: 5464789 (1995-11-01), Saito
patent: 5465000 (1995-11-01), Williams
patent: 5468986 (1995-11-01), Yamamashi
patent: 5729056 (1998-03-01), Sung
IBM Technical Disclosure Bulletin.backslash.vol. 31 No. 7.backslash.Dec. 1988.backslash.Dual Work Function Doping.
IBM Technical Disclosure Bulletin.backslash.vo. 26 No. 10A.backslash.Mar. 1984.backslash.Oxidizable P-Channel Gate Electrode.
Dialog 1996 Derwent Info, Ltd..backslash.Mar. 1996.backslash.p. 2.backslash.JP 6283725.
BU889-0198.backslash.Low Reistivity Stack for Dual Doped Polysilicon Gate Electrode.backslash.Jun. 1991. No. 326.backslash.Kenneth Mason Publications Ltd., England.
Frenette Robert O.
Hallock Dale P.
Mongeon Stephen A.
Speranza Anthony C.
Tonti William R. P.
International Business Machines - Corporation
Ngo Ngan V.
Walter, Jr. Howard J.
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