Dual wavelength UV lamp reactor and method for cleaning/ashing s

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Removal of imaged layers

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134 13, G03F 742

Patent

active

061434779

ABSTRACT:
A method of ashing or cleaning a wafer, including introducing oxygen gas into a reaction chamber having therein a semiconductor wafer to be ashed or cleaned, producing light of wavelength less than 190 nanometers by means of a first excimer lamp, and directing the light into the oxygen gas, causing generation of ozone gas. Light of wavelength greater than 190 nanometers is produced by means of a second excimer lamp and directed that light into the ozone gas, causing generation of an oxygen radical having a high absorption coefficient. Gas including the oxygen radical is passed along a surface of the wafer, causing degeneration of organic material thereon.

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patent: 5547642 (1996-08-01), Seiwa et al.
patent: 5747387 (1998-05-01), Koizumi et al.
patent: 5762755 (1998-06-01), McNeilly et al.

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