Dual-wafer tunneling gyroscope and an assembly for making same

Details Dual-wafer tunneling gyroscope and an assembly for making same Dual-wafer tunneling gyroscope and an assembly for making same

2005-12-13

2005-12-13

Le, Dung A. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Physical deformation

C257S414000, C257S415000, C257S587000, C438S022000, C438S048000

Reexamination Certificate

active

06975009

ABSTRACT:
A MEM tunneling gyroscope assembly includes (1) a beam structure, and a mating structure defined on a first substrate or wafer; and (2) at least one contact structure, and a mating structure defined on a second substrate or wafer, the mating structure on the second substrate or wafer being of a complementary shape to the mating structure on the first substrate or wafer; and (3) a bonding layer is disposed on at least one of said mating structures for bonding the mating structure defined on the first substrate or wafer to the mating structure on the second substrate or wafer.

REFERENCES:
patent: 5015850 (1991-05-01), Zdeblick et al.
patent: 5210714 (1993-05-01), Pohl et al.
patent: 5226321 (1993-07-01), Varnham et al.
patent: 5265470 (1993-11-01), Kaiser et al.
patent: 5313835 (1994-05-01), Dunn
patent: 5354985 (1994-10-01), Quate
patent: 5475318 (1995-12-01), Marcus et al.
patent: 5659195 (1997-08-01), Kaiser et al.
patent: 5665253 (1997-09-01), Kubena et al.
patent: 5666190 (1997-09-01), Quate et al.
patent: 5729074 (1998-03-01), Shiomi et al.
patent: 5747804 (1998-05-01), Williams et al.
patent: 5883387 (1999-03-01), Matsuyama et al.
patent: 5894090 (1999-04-01), Tang et al.
patent: 5929497 (1999-07-01), Chavan et al.
patent: 5994750 (1999-11-01), Yagi
patent: 6075585 (2000-06-01), Minne et al.
patent: 6091125 (2000-07-01), Zavracky
patent: 6092423 (2000-07-01), Beardmore
patent: 6126311 (2000-10-01), Schuh
patent: 6174820 (2001-01-01), Habermehl et al.
patent: 6211532 (2001-04-01), Yagi
patent: 6229190 (2001-05-01), Bryzek et al.
patent: 6296779 (2001-10-01), Clark et al.
patent: 6337027 (2002-01-01), Humphrey
patent: 6563184 (2003-05-01), Kubena et al.
patent: 6580138 (2003-06-01), Kubena et al.
patent: 43 05 033 (1993-10-01), None
patent: 0 619 495 (1994-10-01), None
patent: 04-369418 (1992-12-01), None
patent: 08-203417 (1996-08-01), None
patent: 97/10698 (1997-03-01), None
U.S. Appl. No. 10/358,471, filed Feb. 4, 2003, Kubena et al.
U.S. Appl. No. 10/370,124, filed Feb. 18, 2003, Kubena et al.
U.S. Appl. No. 10/429,988, filed May 6, 2003, Kubena et al.
U.S. Appl. No. 10/639,289, filed Aug. 11, 2003, Kubena et al.
Abstract of JP 04-369418,Patent Abstracts of Japan, vol. 017, No. 250, May 18, 1993.
Abstract of JP 08-203417,Patent Abstracts of Japan, vol. 1996, No. 12, Dec. 26, 1996.
Cheng, Y.T. and Khalil Najafi, “Localized Silicon Fusion and Eutectic Bonding for MEMS Fabrication and Packaging”,Journal of Microelectromechanical Systems, vol. 9, No. 1, pp. 3-8 (Mar. 2000).
Liu, C-H, et al., “Characterization of a High-Sensitivity Micromachined Tunneling Accelerometer with Micro-g Resolution”,Journal of Microelectromechanical Systems, vol. 7, No. 2, pp. 235-243 (Jun. 1998).
Kubena, R.L., et al., “A New Miniaturized Surface Micromachined Tunneling Accelerometer”, IEEE Electron Device Letters, vol. 17, No. 6, pp. 306-308 (Jun. 1996).
Kubena, R.L., et al., “New miniaturized tunneling-based gyro for inertial measurement applications,”43rd Journal of Vacuum Science & Technology B(Microelectronics and Nanometer Structures, vol. 17, No. 6, pp. 2948-2952 (Nov./Dec. 1999).
Motamedi, M.E., et al., “Tunneling Tip Engine for Microsensors Applications”,Materials and Device Characterization in Micromachining II-Proceedings of the SPIE, Santa Clara, California, vol. 3875, pp. 192-199 (Sep. 1999).
Grade, John, et al., “Wafer-Scale Processing, Assembly, and Testing of Tunneling Infrared Detectors”, Transducers '97, 1997 International Conference on Solid State Sensors and Actuators,Chicage, Jun. 16-19, pp. 1241-1244.
Kenny, T.W., et al., Micromachined Silicon Tunnel Sensor for Motion Detection, Appl. Physics Letter, vol. 58, No. 1, Jan. 7, 1991, pp. 100-102.
Yeh, et al., “A Low Voltage Bulk-Silicon Tunneling-Based Microaccelerometer”, IEEE, 1995 pp. 23.1.1-23.1.4.
Grétillat, F., et al., “Improved Design of a Silicon Micromachined Gyroscope with Piezoresistive Detection and Electromagnetic Excitation,”IEEE Journal of Microelectromechanical Systems, vol. 8, No. 3, pp 243-250 (Sep. 1999).
Zavracky, P.M., et al., “Design and Process Considerations For A Tunneling Tip Accelerometer,”J. Micromech. Microeng., vol. 6, No. 3, pp. 192-199 (Sep. 1996).

Affiliated with

Also associated with

Rating

Dual-wafer tunneling gyroscope and an assembly for making same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Dual-wafer tunneling gyroscope and an assembly for making same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dual-wafer tunneling gyroscope and an assembly for making same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3500691