Dual trench isolation using single critical lithographic...

Details Dual trench isolation using single critical lithographic... Dual trench isolation using single critical lithographic...

2005-09-27

2005-09-27

Thai, Luan (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S427000, C438S241000, C438S424000

Reexamination Certificate

active

06949801

ABSTRACT:
A method and apparatus for forming shallow and deep isolation trenches in a substrate so that the shallow and deep isolation trenches are aligned without mis-registration. The method includes forming a plurality of shallow trenches, covering a portion of the plurality of shallow trenches, then etching the uncovered shallow trenches to create deeper trenches.

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patent: 2005/0020003 (2005-01-01), Johansson et al.

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